Journal
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
Volume 25, Issue 1, Pages 58-65Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCAD.2005.853702
Keywords
carbon nanotube; interconnect delay; interconnects
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Semiconducting carbon nanotubes (CNTs) have gained immense popularity as possible successors to silicon as the channel material for ultrahigh-performance field-effect transistors (FETs). On the other hand, their metallic counterparts have often been regarded as ideal interconnects for future technology generations. Owing to their high current densities and increased reliability, metallic single-walled CNTs (SWCNTs) have been subjects of fundamental research, both in theory, as well as experiments. Metallic CNTs have been modeled for radio-frequency (RF) applications using a transmission-line model. In this paper, we present an efficient circuit-compatible RLC model for metallic SWCNTs, and analyze the impact of SWCNTs on the performance of ultrascaled digital very large scale integration (VLSI) design.
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