Journal
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY
Volume 4, Issue -, Pages 406-409Publisher
SURFACE SCI SOC JAPAN
DOI: 10.1380/ejssnt.2006.406
Keywords
Scanning Tunneling Microscopy; Te; Si(111)
Categories
Funding
- Japan Society for the Promotion of Science [13GS0022]
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The initial adsorption process of Te on Si(111) 7 x 7 surface at elevated temperatures was observed using STM. Te atoms form clusters. However the adsorption site changes with the substrate temperature. The oval clusters sits in between the faulted and unfaulted halves at around 300 degrees C, and the preferential adsorption at center adatoms is observed. The triangular clusters form on three adatoms in either the faulted or unfaulted halves without remarkable preference at around 500 degrees C.
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