Journal
JOURNAL OF MICROSCOPY
Volume 221, Issue -, Pages 1-7Publisher
WILEY
DOI: 10.1111/j.1365-2818.2006.01533.x
Keywords
algorithm; distortion; HAADF; nanostructures; STEM
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Systematic distortion has been analysed in high-angle annular dark-field (HAADF) images which may be caused by electrical interference. Strain mapping techniques have been applied to a strain-free GaAs substrate in order to provide a broad analysis of the influence of this distortion on the determination of local strain in the heterostructure. We have developed a methodology for estimating the systematic distortion, and we correct the original images by using an algorithm that removes this systematic distortion.
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