Strain determination in MBE-grown InAs quantum wires on InP

We have determined the strain in the three crystallographic directions in InAs quantum wires (QWr) grown by molecular beam epitaxy on (001)InP substrate. We used triple crystal x-ray diffraction to make scans along and perpendicular to the QWr direction in reciprocal space, around InP(220) reflections. We use the shape and strain sensitivity of the different scans to deconvolute both contributions. We used the alpha(f) scan analysis in grazing incidence diffraction to measure the strain relaxation perpendicular to the QWr as a function of height in the wire. We finally compare these results with finite elements calculations of the strain tensor in InAs QWr on InP.