Journal
PHYSICAL REVIEW B
Volume 73, Issue 2, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.73.020402
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We combine a material self-assembly with conventional lithographic processes in order to fabricate magnetoelectronic devices composed of ordered three-dimensional arrays of magnetite (Fe3O4) nanoparticles. The device magnetoresistance reaches 35% at 60 K, corresponding to an electron spin polarization of 73%. Magnetoresistance of 12% remains at room temperature. Magnetoresistance decreases with both increasing temperature and bias voltage, however, the magnetoresistance of nanoparticle-based structures is only weakly dependent on the voltage-a favorable attribute for application to electronics.
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