Preparation of conductive organic-inorganic cubic perovskite thin films by dual-source vacuum vapor deposition

We successfully obtained conductive organic-inorganic cubic perovskite CH3NH3SnI3 thin films by vacuum vapor deposition. The vacuum-deposited thin films showed a low electrical resistivity of 8.7 x 10(-4) Omega cm. Furthermore, the Cubic perovskite thin film could be patterned in the shape of a shadow mask by vacuum vapor deposition. A field-effect transistor (FET) comprising a pentacene thin film as a semiconductor and the cubic perovskite thin films as source-drain electrodes was fabricated. The FET with the cubic perovskite top-contact source-drain electrodes revealed typical field-effect characteristics. The saturation-regime hole mobility, drain current on/off ratio, and threshold voltage of the FET were 0.004 cm(2)/((VS)-S-.), 1.2 x 10(3), and -7.2 V, respectively.