Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 153, Issue 3, Pages G218-G222Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.2160451
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This work presents a new and simple approach for modeling silicon on insulator metal-oxide-semiconductor (MOS) de characteristics for nonrectangular layout devices, based on decomposition of the original shape into trapezoidal parts and on an accurate but simple model of the trapezoidal layout transistor. Analytical expressions relating geometrical parameters and terminal current and voltages are presented for several shapes, such as L, U, T, and S, and other well-known devices such as the edgeless transistor and the asymmetric trapezoidal gate transistor. The proposed closed-form analytical expressions show good agreement with measured data and three-dimensional simulation results. (c) 2006 The Electrochemical Society.
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