Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 153, Issue 12, Pages G1015-G1019Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.2352045
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The process of bonding InP/InGaAsP dies to a processed silicon-on-insulator wafer using sub-300 nm layers of DVS-bis-benzocyclobutene (BCB) was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebonding die preparation and polymer precure are presented. Bonding quality and bonding strength are assessed, showing high-quality bonding with sufficient bonding strength to survive postbonding processing. (c) 2006 The Electrochemical Society.
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