Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 18, Issue 1-4, Pages 55-57Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2005.860060
Keywords
BiCMOS; photodetectors; phototransistors; SiGe; Si photonics
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We present a new approach to obtain low-cost and high-performance SiGe phototransistors in a commercial BiCMOS process. Photoresponsivity of 2.7 A/W was obtained for 850-nm detection due to the transistor gain, corresponding to 393% quantum efficiency. Responsivities of 0.13 A/W and 0.07 mA/W were achieved for 1060 and 1310 nm with SiGe absorption. With V-ce = 2 V, we measure a -3-dB bandwidth of up to 5.3 GHz for phototransistors with a 4-mu m(2) active area and 2.0 GHz for phototransistors with 60-mu m(2) active area and finger contacts. This high-efficiency and high-speed phototransistor is an enabling device for monolithic receiver integration.
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