Journal
SOLID STATE COMMUNICATIONS
Volume 139, Issue 1, Pages 27-30Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2006.05.005
Keywords
semiconductors; polymers; elastomers and plastics; electronic transport
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We report the development of a hybrid semiconductor-metal-semiconductor permeable-base transistor in vertical architecture. This transistor has a p-type silicon collector, a thin tin layer as base and a magnetoresistive conjugated polymer, poly(9,9-dioctyl-1,4-fluorenylenevinylene), as emitter material. The transistor transport characteristics are dependent on the applied magnetic field and the base transport factor for positive charge carriers is nearly ideal, independently of the magnetic field in the investigated range. (c) 2006 Elsevier Ltd. All rights reserved.
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