Journal
MOLECULAR CRYSTALS AND LIQUID CRYSTALS
Volume 444, Issue -, Pages 219-224Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/15421400500364998
Keywords
mobility; organic semiconductor; pentacene; transistor; work function
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We have investigated the dependence of polycrystalline pentacene thin-film transistors (TFTs) characteristics on work function of source-drain contact metals. The pentacene TFTs using Mg, Al, Ag, and Au source-drain electrodes showed only p-type characteristics and the field-effect hole mobilities were strongly dependent on their work function. On the other hand, the pentacene TFTs using Ca source-drain electrodes showed typical ambipolar characteristics. The field-effect hole mobility of 4.5 x 10(-4) cm(2)/Vs and field-effect electron mobility of 2.7 x 10(-5) cm(2)/Vs were estimated from saturation currents. Appearance of an electron enhancement mode in pentacene TFTs was ascribed to the lowering of barrier for electron injection at source electrodes.
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