4.4 Article

Optical properties of bulk Zn1-xCoxO magnetic semiconductors

Journal

SOLID STATE COMMUNICATIONS
Volume 137, Issue 3, Pages 142-145

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2005.11.002

Keywords

semiconductors; impurities in semiconductors; optical properties

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Polycrystalline Zn1-xCoxO (x=0, 0.02, 0.05, 0.10 and 0.15) oxides have been synthesized by solid state reaction via sintering ZnO and Co powders in open air. X-ray diffraction analyses using Rietveld refinement indicate that a stoichiometric single phase with a wurtzite-like structure was found in Zn1-xCoxO samples with x up to 0.10. The elemental mapping using energy dispersive X-ray spectroscopic analyses presents a uniform distribution of Co. Optical transmittance measurements show that several extra absorption bands appear in the Co-doped ZnO, which is due to the transitions between the crystal-field-split 3d levels of tetrahedral Co2+ substituting Zn2+ ions. Raman measurements show that limited host lattice defects are induced by Co doping. Magnetization measurements reveal that the Co-doped ZnO samples are paramagnetic due to the absence of free carriers and in low temperature the dominant magnetic interaction is nearest-neighbor anti ferromagnetic. (c) 2005 Elsevier Ltd. All rights reserved.

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