Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 44, Issue 10, Pages 3360-3366Publisher
SPRINGER
DOI: 10.1007/s11664-015-3892-4
Keywords
InAsSb; energy gap bowing; long-wave infrared; barrier photodetector
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Funding
- US Army Research Office [W911NF1220057]
- US National Science Foundation [DMR1160843]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1160843] Funding Source: National Science Foundation
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Bulk unrelaxed InAsSb alloys with Sb compositions up to 65% were grown on compositionally graded GaInSb and AlInSb buffers on GaSb substrates by molecular beam epitaxy. The minimum energy gap for these materials at T = 77 K was estimated to be 90 meV. Benchmark material parameters were measured for barrier photodetector heterostructures with 1-mu m-thick InAs0.6Sb0.4 absorbers. A minority hole lifetime of 185 ns and a diffusion length of 9 mu m at T = 77 K were determined from the transient response of barrier heterostructures. The data imply a hole mobility of 10(3) cm(2)/Vs, which was confirmed with frequency response measurements. A 100-mu m square mesa contact nBn heterostructure demonstrated a -3 dB frequency response bandwidth of 50 MHz.
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