Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 9, Issue 2, Pages C48-C50Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.2150165
Keywords
-
Ask authors/readers for more resources
Seedless superfilling by copper electrodeposition is demonstrated on submicrometer trenches with Ir barrier layers deposited by atomic layer deposition. The Cu deposition is seen to occur smoothly and continuously on the Ir without the benefit of a copper seed layer. The work supports efforts to develop diffusion barriers compatible with seedless superfill for damascene fabrication of interconnects. It also indicates the suitability of atomic layer deposition for fabrication of barrier layers, in this case Ir, for seedless processing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available