Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 9, Issue 12, Pages G343-G346Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.2353899
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The electric-pulse-induced resistive switching properties of TiO2, Al2O3, Al2O3/TiO2, and Al2O3/TiO2/Al2O3 thin films were studied by current-voltage (I-V) measurements using Pt/insulator/Ru structures and conductive atomic force microscopy. The switching parameters of the TiO2 film were stable, whereas those of the Al2O3 films show random variations during repeated I-V measurements. Both films show resistive switching by a filamentary switching mechanism with linear conduction behavior in the low V region. The stacked film shows a bias polarity-dependent switching behavior. This suggests that the nucleation of the conducting filaments occurs at the interface where the electrons are injected. (c) 2006 The Electrochemical Society.
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