p-type doping by B ion implantation into diamond at elevated temperatures

We have studied B ion implantation at 400 degrees C into undoped homoepitaxial chemical vapor deposition diamond films and high-pressure and high-temperature (HPHT) synthetic IIa substrates. The highest Hall mobility at room temperature is 268 cm(2)/Vs among B implanted homoepitaxial films, while it is 38 cm(2/)Vs for the B implanted HPHT synthetic IIa substrate. The present result reveals that the quality of a doped layer is strongly dependent upon that of a diamond substrate employed for ion implantation. (c) 2005 Elsevier B.V. All rights reserved.