Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 9, Issue 4, Pages G111-G113Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.2167927
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The interdiffusion of Ni from fully silicided NiSi metal gates through gate dielectrics into the Si substrate after N-2 annealing or forming gas annealing consistent with back-end-of-line thermal budgets is presented by using back-side secondary ion mass spectrometry profiling. Ni penetration is observed through 1.3 nm thick SiON into the Si channel region after annealing for 60 min at temperatures of 350 - 400 degrees C. However, Ni penetration through 1.5 nm HfSiON/0.8 nm SiO2 film into the Si channel is close to the limit of detection after annealing under similar conditions. The results suggest that Ni penetration can be suppressed by a dielectric film with sufficient thickness. (c) 2006 The Electrochemical Society.
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