4.5 Article

Enhanced Room Temperature Ferromagnetism by Fe Doping in Zn0.96Cu0.04O Diluted Magnetic Semiconductors

Journal

JOURNAL OF ELECTRONIC MATERIALS
Volume 45, Issue 2, Pages 976-982

Publisher

SPRINGER
DOI: 10.1007/s11664-015-4253-z

Keywords

Fe; Cu doped ZnO; x-ray diffraction; photoluminescence; magnetic properties

Funding

  1. University Grant Commission (UGC), New Delhi, India [41-968/2012 (SR)]

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Zn0.96-xCu0.04FexO (0 <= x <= 0.04) nanoparticles synthesized via the sol-gel technique had a hexagonal wurtzite ZnO structure without any Fe/Cu-related secondary phases. The crystallite size was reduced from Fe = 0% (23 nm) to Fe = 4% (16 nm) due to the suppression of grain surface growth by foreign impurities. Doping of higher Fe concentrations into Zn-Cu-O suppressed the ultra-violet (UV) emission band and balanced the defect-related visible emissions. The decrease of the UV and green emission intensity ratio (I-UV/I-green) and the UV and blue emission intensity ratio (I-UV/I-blue) in photoluminescence spectra implied an increase of defect states with the increase of Fe concentrations. All the samples showed clear room temperature ferromagnetism. The saturation magnetization was increased by Fe co-doping which was attributed to the interaction between Fe-Fe ions. X-ray photoelectron spectra confirmed the absence of secondary phases like Fe3O4.

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