Journal
SURFACE AND INTERFACE ANALYSIS
Volume 39, Issue 1, Pages 16-25Publisher
WILEY
DOI: 10.1002/sia.2453
Keywords
ESF; LSF; MTF; SIMS; accuracy; deconvolution; edge method; edge spread function; inter-laboratory comparison; ion microscopy; lateral resolution; length scale calibration; line spread function; modulation transfer function; nanometrology; nanotechnology; primary ion beam width; square-wave grating; strip pattern
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Recently, BAM organised an inter-laboratory comparison focussed on lateral resolution and accuracy of sub-micron length measurements by secondary ion mass spectrometry (SIMS). Results were submitted by 16 laboratories from 10 countries. The task was to analyse a cross-sectioned semiconductor multilayer stack. The resulting strip pattern in the surface of the sample shows narrow strips, step transitions and gratings of different periods. Imaging analysis of this pattern enables the determination of relevant parameters related to the lateral resolution: (i) The width (FWHM) of the primary ion beam, (ii) the distance between 16% and 84% intensity points in a profile across the image of a step transition and (iii) the modulation of intensity in the images of gratings with different periods. The parameter's data reported by the participants vary in a wide range. A strong variation in the data of primary ion beam width was observed for results measured with the same type of instrument. The distance between two narrow strips was measured with high accuracy. Twelve of sixteen of the submitted values are within the limits of uncertainty of the reference value 964 35 rim. This result shows that the calibration of the length scale of the SIMS instruments is already rather precise in most of the participating laboratories. Copyright (C) 2006 John Wiley & Sons, Ltd.
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