Journal
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY
Volume 20, Issue 1, Pages 57-59Publisher
TECHNICAL ASSOC PHOTOPOLYMERS,JAPAN
DOI: 10.2494/photopolymer.20.57
Keywords
organic field-effect transistor; OTS; naphthalene; thienothiophene
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Field-effect transistors (FETs) consisting of vapor-deposited thin-film of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) as an active layer on silanized Si/SiO2 substrates were fabricated and evaluated. Depending on the length of alkyl groups in silanization reagents, FET characteristics of the devices were affected: with octadecyltrichlorosilane (C-18-OTS), devices showing superior FET characteristics up to FET mobility of 3.1 cm(2) V-1 s(-1) were obtained.
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