4.4 Article

Nano temperature sensor using selective lateral growth of carbon nanotube between electrodes

Journal

IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 6, Issue 1, Pages 63-69

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2006.888531

Keywords

carbon nanotube; molecular electronics; nanosensor; nanotechnology; selective lateral growth; semiconductor devices; temperature sensor

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This paper presents lateral growth of carbon nanotube (CNT) between two electrodes and its use as nano temperature sensor. Fabrication of electrodes is made by MEMS techniques. The CNT is grown selectively by microwave plasma chemical vapor deposition between two electrodes. After wire bonding, the grown CNT is tested and calibrated. The growth conditions of CNT, such as the flow rate of CH4 or N-2 gas, are varied to obtain a high-quality CNT sensor. SEM is used to observe the shape and structure of CNT, while Raman spectrum analysis is used to indicate the degree of graphitization or amorphrous structure in the CNT. The I-V curve of CNT is measured at different temperature, and a linear relationship between the electric resistance of CNT and the temperature is obtained. This result indicates that CNT can be used as a temperature sensor.

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