Journal
JOURNAL OF ELECTROCERAMICS
Volume 35, Issue 1-4, Pages 106-110Publisher
SPRINGER
DOI: 10.1007/s10832-015-0001-2
Keywords
In-Ga-Zn-O(IGZO); Flexible thin filmtransistor; Polyimide substrates; Mechanical strain; Negative bias illumination stress (NBIS)
Categories
Funding
- National Research Foundation of Korea (NRF) - Ministry of Education [2014R1A1A2055138]
- National Research Foundation of Korea [2014R1A1A2055138] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
Flexible thin-film transistors (TFTs) incorporating In-Ga-Zn-O (IGZO) as the active layer were fabricated on polyimide substrates. The electrical properties and device stability were evaluated before and after detaching the polyimide from the carrier glass. The TFT performance and reliability under negative bias illumination stress (NBIS) degrade considerably once the polyimide film is separated from the rigid glass substrate. It is suggested that mechanical strain induces the formation of excess oxygen vacancies in the IGZO semiconductor, and these become ionized upon illumination to act as net positive charge traps during the NBIS measurements.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available