RF capillary jet - a tool for localized surface treatment

The UV/VUV spectrum of a non-thermal capillary plasma jet operating with Ar at ambient atmosphere and the temperature load of a substrate exposed to the jet have been measured. The VUV radiation is assigned to N, H, and O atomic lines along with an Ar*(2) excimer continuum. The absolute radiance (115 - 200 mn) of the source has been determined. Maximum values of 880 mu W/mm(2) sr are obtained. Substrate temperatures range between 35 degrees C for low powers and high gas flow conditions and 95 degrees C for high powers and reduced gas flow. The plasma source (13.56, 27.12 or 40.78 MHz) can be operated in Ar and in N-2. The further addition of a low percentage of silicon containing reactive admixtures has been demonstrated for thin film deposition. Several further applications related to surface modification have been successfully applied.