Journal
MATERIALS LETTERS
Volume 61, Issue 14-15, Pages 3134-3137Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2006.11.011
Keywords
silicon carbide; nanowire; electron holography; electron energy loss spectroscopy
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SiC nanowires with modulation in diameter and interior structure along the growth direction have been fabricated via a self-organized process. The SiC nanowires, the basic structure of which is zincblende-type, contain many bunching stacking faults along the growth direction inhomogeneously. In other words, the SiC nanowires consist of alternate stacks of the perfect crystal and the defective regions. We have found the difference in the values of mean inner potential between the perfect crystal and the defective regions by means of electron holography. (c) 2006 Elsevier B.V. All rights reserved.
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