Journal
PHYSICA B-CONDENSED MATTER
Volume 390, Issue 1-2, Pages 263-269Publisher
ELSEVIER
DOI: 10.1016/j.physb.2006.08.023
Keywords
crystallization kinetics; DSC; thermal analysis; annealing effect
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In this work, the crystallization kinetics of Se thin films has been studied under nonisothermal conditions using a differential scanning calorimetric (DSC) technique. The analysis focuses on the effect of temperature (385 K <= T <= 418 K) on the DSC results. Two methods were used to determine the variation of the activation energy for crystallization E, with temperature. It was found to change from 69 +/- 4 kJ mol(-1) down to 23 3.2 kJ mol(-1) and from 83 3.3 kJ mol(-1) down to 55 2.5 kJ mol(-1) for results obtained using the Friedman and Kissinger-Akahira-Sunose methods, respectively. The effects of annealing were revealed by studying the morphology of the samples using scanning electron microscopy and atomic force microscopy. The Johnson-Mehl-Avrami and Prout-Tompkins models have been used for the description of DSC crystallization data. It seems that two-dimensional growth is the most probable mechanism of the crystallization, particularly at high temperature. (c) 2006 Elsevier B.V. All rights reserved.
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