Fabrication of Ge2Sb2Te5 based PRAM device at 60 nm scale by using UV nanoimprint lithography

Phase change memory is one of the most promising non-volatile memory for the next generation memory media due to its simplicity, wide dynamic range, fast switching speed and possibly low power consumption. Low power consuming operation of phase change random access memory (PRAM) can be achieved by confining the switching volume of phase change media into nanometer scale. Nanoimprint lithography is an emerging lithographic technique in which surface protrusions of a mold such as sub-100 nm patterns are transferred into a resin layer easily. In this study, crossbar structures of phase change device array based on Ge2Sb2Te5 were successfully fabricated at 60 nm scale by two consecutive UV nanoimprint lithography and metal lift-off process, which showed on/off resistance ratio up to 3000. (c) 2006 Elsevier B.V. All rights reserved.