Optical properties of ZnO fabricated on GaAs by molecular beam epitaxy

Optical properties of ZnO thin films fabricated on GaAs substrate by molecular beam epitaxy method were investigated. The emissions from acceptor-bound exciton and free electron acceptor were enhanced after annealing at 550 degrees C for I h. In the photoluminescence spectra of the annealed sample, donor-acceptor pair emission was confirmed by changing excitation density. Hall measurement indicated that the conductivity of the ZnO thin film converses from n-type to high resistant after thermal diffusion by annealing at 550 degrees C. (c) 2006 Elsevier B.V. All rights reserved.