Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 54, Issue 1, Pages 78-82Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2006.887198
Keywords
low-frequency noise; reliability; strained-silicon
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A complete comparison of performance and reliability between polysilicon gate/SiON oxide nMOSFETs with and without SiN cap layer is presented. The uniaxial tensile strain induced by the cap layer causes an improvement in the channel current drive capability without degrading the noise performance. The gain in the transconductance, for the strained devices, was found to decrease for increasing channel lengths and for higher channel fields. Similar robustness against hot carrier stress, bias-temperature instability, and time to breakdown were found between strained and unstrained-silicon devices, confirming the advantages.
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