Solution-Processed Zirconium Oxide Gate Insulators for Top Gate and Low Operating Voltage Thin-Film Transistor

We report a solution-processed a top gate indium-gallium-zinc oxide thin film transistors (IGZO TFTs) with high-zirconium oxide (ZrOx) dielectric. Both the dielectrics and electrodes were fabricated by spin coating or screen printing. The ZrOx exhibits an amorphous structure and smooth enough to be used as a gate insulator for TFT. The TFT with maximum process temperature of 300 degrees C had a saturation mobility of 0.2 cm(2)/V . s, an on/off ratio of 10, a threshold voltage of 0.3 V, and the subthreshold swing is 0.34 V/decade.