Journal
EUROPEAN PHYSICAL JOURNAL B
Volume 56, Issue 4, Pages 323-333Publisher
SPRINGER
DOI: 10.1140/epjb/e2007-00127-2
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We develop a theoretic description of the photogalvanic current induced by a high frequency radiation in asymmetric nanostructures and show that it describes well the results of numerical simulations. Our studies allow to understand the origin of the electronic ratchet transport in such systems and show that they can be used for creation of new types of detectors operating at room temperature in a terahertz radiation range.
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