Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 10, Issue 1, Pages H20-H22Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.2364304
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A simple one-step focused ion beam (FIB) etching technique was used to fabricate a microlens array on the back side of sapphire substrate of a GaN blue light emitting diode (LED) with a nominal lens diameter of 2.7 mu m. The microlens array can enhance the electroluminescence of GaN/sapphire blue LED to about 1.6 times at 20 mA. (c) 2006 The Electrochemical Society.
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