Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition

The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n- type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide. (c) 2007 The Electrochemical Society.