Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 42, Issue 6, Pages 1271-1281Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2007.897170
Keywords
envelope tracking; orthogonal frequency-division multiplexing (OFDM); power amplifier (PA); SiGe; wireless local-area network (WLAN)
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A monolithic SiGe BiCMOS envelope-tracking power amplifier (PA) is demonstrated for 802.11g OFDM applications at 2.4 GHz. The 4-mm(2) die includes a high-efficiency high-precision envelope amplifier and a two-stage SiGe HBT PA for RF amplification. Off-chip digital predistortion is employed to improve EVM performance. The two-stage amplifier exhibits 12-dB gain, <5% EVM, 20-dBm OFDM output power, and an overall efficiency (including the envelope amplifier) of 28%.
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