Journal
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 17, Issue 4, Pages 301-303Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2007.892990
Keywords
circuit modeling; de-embedding; millimeter wave; measurements; MOSFET; S-parameters; transistor modeling
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In this letter, a de-embedding procedure is proposed to accurately extract the small signal equivalent circuit of advanced MOSFETs up to 110 GHz. This efficient procedure is easy to implement using only one open dummy structure to de-embed the external parasitics (probe pads, interconnecting transmission line, and top-down metallic interconnections and via holes) and is in particular suitable for industrial online automatic test. The method has been validated in the case of 65-nm n-MOSFETs and is proved to be efficient up to 110 GHz.
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