Journal
IEEE ELECTRON DEVICE LETTERS
Volume 28, Issue 4, Pages 292-294Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2007.892367
Keywords
HfLaON; Ir3Si; MOSFET; work function
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We report a novel 1000 degrees C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 x 10(-5) A/cm(2) at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm(2)/V center dot s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000 degrees C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.
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