Structural and optical properties of AgInSe2 films

Silver Indium selenide (AgInSe2) films have been prepared by thermal evaporation technique onto the glass Substrate kept in the range (473-573 K) at pressure of 1.3 x 10(-5) Torr. The films so prepared were studied for structural, electrical and optical properties. The films appear to be n-type indicating electrons as dominant charge carriers and show increase in electrical conductivity with corresponding increase in substrate temperature X-ray diffraction pattern reflects AgInSe2 single phase with predominant (112) orientation. Scanning electron micrographs show an increase in grain size with substrate temperature which may be attributed to more ordered structure. The films show an allowed transition near the fundamental absorption edge (Eg(1)) in addition to a transition originating from crystal field split levels (Eg(2)). The optical band gap of the films lie in the range 1.19-1.98 eV.