Journal
JOURNAL OF CRYSTAL GROWTH
Volume 413, Issue -, Pages 1-4Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2014.12.011
Keywords
Characterization; Substrates; High resolution X-ray diffraction; Growth from solutions; Nitrides; Semiconducting gallium compounds
Funding
- FRGS Grant [203/PFIZIK/6711282]
- Ministry of Higher Education Malaysia
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In this study, wurtzite gallium nitride (GaN) thin film was directly grown on hexagonal silicon carbide (6H-SiC) substrate without buffer layer using sol-gel spin coating method followed by annealing and nitridation process. The entire growth process was investigated in-depth. The results revealed that the conversion of GaN thin film proceeds through an intermediate of amorphous gallium(I) sub-oxide (Ga2O). In this case, the amorphous Ga2O was converted into GaN thin film after being nitridated at 950 degrees C under ammonia ambient. The intermediate of amorphous Ga2O can only be identified through infrared reflectance measurements. (C) 2014 Elsevier B.V. All rights reserved.
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