Journal
JOURNAL OF CRYSTAL GROWTH
Volume 414, Issue -, Pages 196-199Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2014.11.008
Keywords
MOVPE; Patterned growth; Heterostructures; Low dimensional semiconductors; Quantum wires; Photoluminescence
Funding
- Swiss National Science Foundation [200020_156748]
- Swiss National Science Foundation (SNF) [200020_156748] Funding Source: Swiss National Science Foundation (SNF)
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Quasi-one-dimensional AlGaAs quantum wires (QWRs) with parabolic heterostructure profiles along their axis were fabricated using metallorganic vapor phase epitaxy (MOVPE) On patterned (111)B GaAs substrates. Tailoring of the confined electronic states via modification in the parabolic potential profile is demonstrated using model calculations and photoluminescence spectroscopy. These novel nanostructures are useful for studying the optical properties of systems with dimensionality between zero and one. (C) 2014 Elsevier B.V. All rights reserved.
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