Journal
JOURNAL OF CRYSTAL GROWTH
Volume 427, Issue -, Pages 1-6Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2015.06.019
Keywords
Ammonothermal; Hydride vapor phase epitaxy; Growth from solution; Gallium nitride
Funding
- National Center of Research and Development under Grant PBS [PBS1/B5/7/2012]
- budget of National Center for Science [DEC-2011/01/D/ST5/04769]
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Results of gallium nitride crystallization by ammonothermal method are presented. GaN crystals grown earlier by a HVPE method on an ammonothermal GaN substrate and an MOCVD-GaN/sapphire template were used as seeds. Structural and optical properties of the obtained materials are studied and compared. Large radius of curvature (>100 m) and low dislocation density (7 X 10(4)cm(-2)) can be reproduced in the ammonothermal method using an HVPE-GaN seed grown before on ammonothermal GaN. This proves that the use of HVPE-GaN grown on ammonothermal seeds allows to reproduce high crystallinity in a subsequent ammonothermal growth. It also demonstrates that a much more effective multiplication process of high quality GaN can be launched using a combination of the ammonothermal and HVPE methods. (C) 2015 Elsevier B.V. All rights reserved.
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