Journal
JOURNAL OF CRYSTAL GROWTH
Volume 414, Issue -, Pages 38-41Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2014.09.037
Keywords
X-ray diffraction; Atomic force microscopy; Low press. metalorganic vapor phase epitaxy; Nitrides; Semiconducting ternary compounds
Funding
- VII Framework program NEWLED
- Polish National Agency of Research and Development, National Science Centre (NCN) [99531]
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InGaN/GaN multiple quantum well structures were grown on bulk GaN and on sapphire substrates using the metalorganic vapor-phase epitaxy in order to study the influence of hydrogen during the growth of the GaN barriers. This hydrogen flow had the following effects on the structures: (i) the thickness of the QWs was reduced, (ii) the indium concentration in the QWs was decreased and (in) the growth rate of the quantum barriers was increased. (C) 2014 Elsevier B.V. All rights reserved.
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