Journal
BULLETIN OF THE KOREAN CHEMICAL SOCIETY
Volume 34, Issue 2, Pages 411-414Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.5012/bkcs.2013.34.2.411
Keywords
Quantum dot sensitized solar cells (QDSSC); CdS/CdSe; Al2O3; Blocking layer; Open circuit voltage (V-oc)
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Funding
- Pioneer Research Program [2012-0001065]
- Converging Research Center Program through National Research Foundation [2009-0082141]
- Ministry of Educations, Science, and Technology, Korea
- National Research Foundation of Korea [2009-0082141] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In order to enhance the photovoltaic property of the CdS/CdSe co-sensitized quantum dot sensitized solar cells (QDSSCs), the surface of nanoporous TiO2 photoanode was modified by ultrathin Al2O3 layer before the deposition of quantum dots (QDs). The Al2O3 layer, dip-coated by 0.10 M Al precursor solution, exhibited the optimized performance in blocking the back-reaction of the photo-injected electrons from TiO2 conduction band (CB) to polysulfide electrolyte. Transient photocurrent spectra revealed that the electron lifetime (tau(e)) increased significantly by introducing the ultrathin Al2O3 layer on TiO2 surface, whereas the electron diffusion coefficient (D-e) was not varied. As a result, the V-oc increased from 0.487 to 0.545 V, without appreciable change in short circuit current (J(sc)), thus inducing the enhancement of photovoltaic conversion efficiency (eta) from 3.01% to 3.38%.
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