Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 23, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/23/1/015017
Keywords
-
Categories
Funding
- Engineering and Physical Sciences Research Council [EP/F029624/1] Funding Source: researchfish
- EPSRC [EP/F029624/1] Funding Source: UKRI
Ask authors/readers for more resources
A series of CdTe/CdS devices with different tris(dimethylamino) arsine (TDMAAs) partial pressures were grown by metal organic chemical vapour deposition (MOCVD) to investigate the incorporation of arsenic into the bulk. Characterization of the growth layers using secondary ion mass spectrometry (SIMS) showed arsenic concentrations ranging from 1 x 10(16) to 1 x 10(19) atoms cm(-3). A square law dependence of arsenic concentration on the TDMAAs vapour concentration was observed. A reaction mechanism for the decomposition of TDMAAs precursor via dimerization is presented and discussed in terms of reaction kinetics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available