Chloride ion detection by InN gated AlGaN/GaN high electron mobility transistors

Real time chloride ion detection using InN gated AlGaN/GaN high electron mobility transistors (HEMTs) was demonstrated. The InN thin film on the gate area of the HEMT provided fixed surface sites for reversible anion coordination. The drain current of the HEMT sensor exhibited increased a function of chloride ion concentration. The positive ions (Na+, Mg+2, and H+) in the chloride ion solutions showed no effect on the chloride ion concentration detection. The sensor was tested over a range of chloride ion concentrations from 100 nM to 100 mu M. The chloride ion HEMT sensors can be integrated with AlGaN/GaN HEMT based pH and glucose sensors for exhaled breath condensate glucose monitoring technology. The HEMT based sensor can also be integrated into a wireless data transmission system for remote sensing applications.