Journal
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS
Volume 14, Issue 4, Pages 432-436Publisher
NATL ACAD SCIENCES UKRAINE, INST SEMICONDUCTOR PHYSICS
DOI: 10.15407/spqeo14.04.432
Keywords
polytype; silicon carbide; photoluminescence spectrum; 3C-6H transformation
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Results of the research on the photoluminescence study of the 3C-6H-SiC phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov method without a polytypes joint after high temperature annealing were investigated. Fine structure at the energy of E = 2.73, 2.79 eV, E = 2.588 eV, and E = 2.48 eV that appeared after annealing was described. The role of stacking faults in the process of structure transformation was investigated.
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