Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 32, Issue 1, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.4832329
Keywords
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Funding
- Korean Ministry of Knowledge Economy (MKE/KEIT) [10035320]
- Global Research Laboratory Program through the National Research Foundation (NRF) of Korea [2012040157]
- Chonnam National University
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This study examined the effect of sputtering power on the performance of zinc-tin-oxide field-effect transistors and the stability under photobias stress. Large improvements in the saturation mobility and subthreshold swing were found in devices fabricated at higher sputtering powers; 13.80 cm(2)/V.s, 0.33 V/decade at a power of 400 W compared with 2.70 cm(2)/V.s, 1.19 V/decade at a power of 50 W. The threshold voltage shift under negative bias illumination stress (NBIS) for the device fabricated at a power of 400 W shows superior properties (-2.41 V) compared with that (-5.56 V) of the device fabricated at 50 W. The improvements in electrical performance and NBIS stability were attributed to the formation of a denser film and the reduced dielectric/channel interfacial trap densities due to the more energetic bombardment used under high power sputtering conditions. (C) 2014 American Vacuum Society.
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