Journal
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS
Volume 17, Issue 3, Pages 301-307Publisher
NATL ACAD SCIENCES UKRAINE, INST SEMICONDUCTOR PHYSICS
DOI: 10.15407/spqeo17.03.301
Keywords
graphene sheets; thermal decomposition; SiC; atomic force microscopy; micro-Raman spectroscopy
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Funding
- Science and Technology Center in Ukraine (STCU)
- National Academy of Sciences of Ukraine [5716]
- Alexander von Humboldt Institutional Partnership project [DEU/1053880]
- FP7-PEOPLE-2010-IRSES
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A simple method for production of weakly coupled graphene layers by high-temperature sublimation of polycrystalline SiC is presented. The method allows manufacturing carbon-based composite with a high content of weakly coupled graphene layers in large-scale production. The study of the obtained carbon-based material by means of scanning electron microscopy, Raman spectroscopy and atomic force microscopy detected graphene plates with lateral size of up to tens of micrometers. The obtained graphene sheets are shown to have very high crystal perfection, low concentration of defects and weak interlayer coupling, which depends on the growth conditions. The proposed method of producing graphene-based composites is supposed to be very promising due to its relative simplicity and high output.
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