Journal
TURKISH JOURNAL OF PHYSICS
Volume 38, Issue 3, Pages 509-515Publisher
SCIENTIFIC TECHNICAL RESEARCH COUNCIL TURKEY-TUBITAK
DOI: 10.3906/fiz-1405-9
Keywords
Organic active layer thickness; OLED; PVK; TPD; Ir(mppy)(3)
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Funding
- Ege University
- Scientific and Technological Research Council of Turkey (TUBITAK)
- Alexander von Humboldt Foundation (AvH)
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Phosphorescent polymer light emitting diodes (PLEDs) have been fabricated and characterized. A PLED was configured in an ITO/PEDOT:PSS/TPD:PBD:PVK:Ir(mppy)(3)/LiF/Al device structure. Thicknesses of the active layer were optimized for an efficient phosphorescent organic light-emitting diode (OLED) device. The uniform mixing of the active layer was varied with different thicknesses. A hole transport layer of PEDOT:PSS was deposited in a thickness of 35 nm and an emissive layer of TPD:PBD:PVK:Ir(mppy)(3) was deposited in thicknesses of 90 nm, 56 nm, 40 nm, and 35 nm. The 56 nm thickness of the active layer was determined as the proper thickness according to results of current density, luminance, and voltage characteristics of the PLED. The processed PLED device exhibited a turn-on voltage of 3.6 V and a maximum luminance of 575.5 cd m(-2) at 2.8 mA.
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