Journal
RSC ADVANCES
Volume 5, Issue 124, Pages 102362-102366Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ra21022d
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Funding
- Materials Original Technology Program - Ministry of Trade, Industry and Energy of Korea [10041222]
- National Research Foundation of Korea (NRF) grant - Korea government (MSIP) [CAFDC 5-3, NRF-2007-0056090]
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The incorporation of ethylene glycol (EG) into a high-kappa aluminium oxide gate dielectric layer was achieved by a solution process, leading to a distinct increase in the mobility of indium oxide TFT. Frequency-dependent capacitance originating from residual EG was examined and the accompanying effects on indium oxide TFT were studied.
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