Thermoresistive properties of p-type 3C-SiC nanoscale thin films for high-temperature MEMS thermal-based sensors

We report for the first time the thermoresistive property of p-type single crystalline 3C-SiC (p-3C-SiC), which was epitaxially grown on a silicon (Si) wafer, and then transferred to a glass substrate using a Focused Ion Beam (FIB) technique. A negative and relatively large temperature coefficient of resistance (TCR) up to -5500 ppm K-1 was observed. This TCR is attributed to two activation energy thresholds of 45meV and 52 meV, corresponding to temperatures below and above 450 K, respectively, and a small reduction of hole mobility with increasing temperature. The large TCR indicates the suitability of p-3C-SiC for thermal-based sensors working in high-temperature environments.