Journal
RSC ADVANCES
Volume 5, Issue 48, Pages 38125-38129Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ra04515k
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Funding
- Center for Advanced Soft Electronics - Ministry of Science, ICT and Future Planning as Global Frontier Project [2011-0031639]
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We report the simple, photolithography-free, direct patterning of both solution-processed metal oxide semiconductors and dielectrics via selective surface wetting. This technique was directly applied to fabrication of low-voltage all-solution metal oxide thin-film transistors with minimal channel and gate leakage currents.
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